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TOSHIBA GT80J101 N-Channel MOSFET IGBT
- Order number: SW10986
Zum Verkauf steht hier ein
TOSHIBA IGBT
GT80J101
unbenutzte Neuware
new old... more
Product information "TOSHIBA GT80J101 N-Channel MOSFET IGBT"
Zum Verkauf steht hier ein
TOSHIBA IGBT
GT80J101
unbenutzte Neuware
new old stock (NOS)
Technische Daten:
Type Designator: GT80J101
Type: IGBT
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 200
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 80
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.5
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 300
Package: TO264
Type: IGBT
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 200
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 80
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.5
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 300
Package: TO264
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